IndiumV3, Main, Repository, bibRecord, 001358

The study of preparation and photoelectrical properties of chemical bath deposited Zn, Sb and Ni-doped CuInS2 films for hydrogen production

Identifieur interne : 001358 ( Main/Repository ); précédent : 001357; suivant : 001359

The study of preparation and photoelectrical properties of chemical bath deposited Zn, Sb and Ni-doped CuInS2 films for hydrogen production

Auteurs : RBID : Pascal:12-0346549

Descripteurs français

Pascal (Inist)
- Dépôt bain chimique, Matériau dopé, Production vidéo, Production hydrogène, Propriété optique, Effet photoélectrochimique, Diffractométrie RX, Bande interdite, Densité porteur charge, Courant photoélectrique, Eclairement, Catalyseur, Caractéristique électrochimique, Zinc, Nickel, Composé ternaire, Sulfure de cuivre, Sulfure d'indium, Xénon, Matériau cristallin, CuInS2.
Wicri :
- concept : Zinc, Nickel.

English descriptors

KwdEn :
- Catalyst, Charge carrier density, Chemical bath deposition, Copper sulfide, Crystalline material, Doped materials, Electrochemical characteristic, Energy gap, Hydrogen production, Illumination, Indium sulfide, Nickel, Optical properties, Photoelectric current, Photoelectrochemical effect, Ternary compound, Video production, X ray diffractometry, Xenon, Zinc.

Abstract

Pure and Zn, Sb, Ni-doped CuInS₂ films were prepared by chemical bath deposition method. Structural, morphological, optical, and photoelectrochemical properties of the as-grown films were investigated. X-ray diffraction analysis revealed that films consisted of the tetragonal CuInS₂ phase. The energy band gaps and carrier densities of these samples were in the ranges of 1.48-1.54 eV and 2.38 x 10¹⁸-9.38 x 10¹⁹, respectively. The maximum photocurrent density of samples with a potential of -1.0 V vs. a Pt electrode was found to be -8.58 mA/cm² with the largest hydrogen production capability of 33.26 μmol/cm² under illumination using a 300 W Xe lamp system.

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Pascal:12-0346549

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">The study of preparation and photoelectrical properties of chemical bath deposited Zn, Sb and Ni-doped CuInS<sub>2</sub>
 films for hydrogen production</title>
<author><name sortKey="Garskaite, Edita" uniqKey="Garskaite E">Edita Garskaite</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Biotechnology, National Taipei University of Technology</s1>
<s2>Taipei</s2>
<s3>TWN</s3>
<sZ>1 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
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<country>Taïwan</country>
<wicri:noRegion>Taipei</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Pan, Guan Ting" uniqKey="Pan G">Guan-Ting Pan</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Chemical Engineering and Biotechnology, National Taipei University of Technology</s1>
<s2>Taipei</s2>
<s3>TWN</s3>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
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<country>Taïwan</country>
<wicri:noRegion>Taipei</wicri:noRegion>
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<author><name sortKey="Yang, Thomas C K" uniqKey="Yang T">Thomas C.-K. Yang</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Biotechnology, National Taipei University of Technology</s1>
<s2>Taipei</s2>
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<country>Taïwan</country>
<wicri:noRegion>Taipei</wicri:noRegion>
</affiliation>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Chemical Engineering and Biotechnology, National Taipei University of Technology</s1>
<s2>Taipei</s2>
<s3>TWN</s3>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>Taïwan</country>
<wicri:noRegion>Taipei</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Huang, Sheng Tung" uniqKey="Huang S">Sheng-Tung Huang</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Biotechnology, National Taipei University of Technology</s1>
<s2>Taipei</s2>
<s3>TWN</s3>
<sZ>1 aut.</sZ>
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<country>Taïwan</country>
<wicri:noRegion>Taipei</wicri:noRegion>
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</author>
<author><name sortKey="Kareiva, Aivaras" uniqKey="Kareiva A">Aivaras Kareiva</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Department of General and Inorganic Chemistry, Vilnius University</s1>
<s2>Vilnius</s2>
<s3>LTU</s3>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>Lituanie</country>
<wicri:noRegion>Vilnius</wicri:noRegion>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">12-0346549</idno>
<date when="2012">2012</date>
<idno type="stanalyst">PASCAL 12-0346549 INIST</idno>
<idno type="RBID">Pascal:12-0346549</idno>
<idno type="wicri:Area/Main/Corpus">001899</idno>
<idno type="wicri:Area/Main/Repository">001358</idno>
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<seriesStmt><idno type="ISSN">0038-092X</idno>
<title level="j" type="abbreviated">Sol. energy</title>
<title level="j" type="main">Solar energy</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Catalyst</term>
<term>Charge carrier density</term>
<term>Chemical bath deposition</term>
<term>Copper sulfide</term>
<term>Crystalline material</term>
<term>Doped materials</term>
<term>Electrochemical characteristic</term>
<term>Energy gap</term>
<term>Hydrogen production</term>
<term>Illumination</term>
<term>Indium sulfide</term>
<term>Nickel</term>
<term>Optical properties</term>
<term>Photoelectric current</term>
<term>Photoelectrochemical effect</term>
<term>Ternary compound</term>
<term>Video production</term>
<term>X ray diffractometry</term>
<term>Xenon</term>
<term>Zinc</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Dépôt bain chimique</term>
<term>Matériau dopé</term>
<term>Production vidéo</term>
<term>Production hydrogène</term>
<term>Propriété optique</term>
<term>Effet photoélectrochimique</term>
<term>Diffractométrie RX</term>
<term>Bande interdite</term>
<term>Densité porteur charge</term>
<term>Courant photoélectrique</term>
<term>Eclairement</term>
<term>Catalyseur</term>
<term>Caractéristique électrochimique</term>
<term>Zinc</term>
<term>Nickel</term>
<term>Composé ternaire</term>
<term>Sulfure de cuivre</term>
<term>Sulfure d'indium</term>
<term>Xénon</term>
<term>Matériau cristallin</term>
<term>CuInS2</term>
</keywords>
<keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Zinc</term>
<term>Nickel</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">Pure and Zn, Sb, Ni-doped CuInS<sub>2</sub>
 films were prepared by chemical bath deposition method. Structural, morphological, optical, and photoelectrochemical properties of the as-grown films were investigated. X-ray diffraction analysis revealed that films consisted of the tetragonal CuInS<sub>2</sub>
 phase. The energy band gaps and carrier densities of these samples were in the ranges of 1.48-1.54 eV and 2.38 x 10<sup>18</sup>
-9.38 x 10<sup>19</sup>
, respectively. The maximum photocurrent density of samples with a potential of -1.0 V vs. a Pt electrode was found to be -8.58 mA/cm<sup>2</sup>
 with the largest hydrogen production capability of 33.26 μmol/cm<sup>2</sup>
 under illumination using a 300 W Xe lamp system.</div>
</front>
</TEI>
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<fA03 i2="1"><s0>Sol. energy</s0>
</fA03>
<fA05><s2>86</s2>
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<fA06><s2>9</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>The study of preparation and photoelectrical properties of chemical bath deposited Zn, Sb and Ni-doped CuInS<sub>2</sub>
 films for hydrogen production</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>GARSKAITE (Edita)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>PAN (Guan-Ting)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>YANG (Thomas C.-K.)</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>HUANG (Sheng-Tung)</s1>
</fA11>
<fA11 i1="05" i2="1"><s1>KAREIVA (Aivaras)</s1>
</fA11>
<fA14 i1="01"><s1>Institute of Biotechnology, National Taipei University of Technology</s1>
<s2>Taipei</s2>
<s3>TWN</s3>
<sZ>1 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>Department of Chemical Engineering and Biotechnology, National Taipei University of Technology</s1>
<s2>Taipei</s2>
<s3>TWN</s3>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
</fA14>
<fA14 i1="03"><s1>Department of General and Inorganic Chemistry, Vilnius University</s1>
<s2>Vilnius</s2>
<s3>LTU</s3>
<sZ>5 aut.</sZ>
</fA14>
<fA20><s1>2684-2691</s1>
</fA20>
<fA21><s1>2012</s1>
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<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>8338A</s2>
<s5>354000508112990320</s5>
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<fA44><s0>0000</s0>
<s1>© 2012 INIST-CNRS. All rights reserved.</s1>
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<fC01 i1="01" l="ENG"><s0>Pure and Zn, Sb, Ni-doped CuInS<sub>2</sub>
 films were prepared by chemical bath deposition method. Structural, morphological, optical, and photoelectrochemical properties of the as-grown films were investigated. X-ray diffraction analysis revealed that films consisted of the tetragonal CuInS<sub>2</sub>
 phase. The energy band gaps and carrier densities of these samples were in the ranges of 1.48-1.54 eV and 2.38 x 10<sup>18</sup>
-9.38 x 10<sup>19</sup>
, respectively. The maximum photocurrent density of samples with a potential of -1.0 V vs. a Pt electrode was found to be -8.58 mA/cm<sup>2</sup>
 with the largest hydrogen production capability of 33.26 μmol/cm<sup>2</sup>
 under illumination using a 300 W Xe lamp system.</s0>
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</fC02>
<fC02 i1="02" i2="X"><s0>230</s0>
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<fC03 i1="01" i2="X" l="FRE"><s0>Dépôt bain chimique</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="X" l="ENG"><s0>Chemical bath deposition</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="X" l="SPA"><s0>Depósito baño químico</s0>
<s5>01</s5>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>Matériau dopé</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="3" l="ENG"><s0>Doped materials</s0>
<s5>02</s5>
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<fC03 i1="03" i2="X" l="FRE"><s0>Production vidéo</s0>
<s5>03</s5>
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<fC03 i1="03" i2="X" l="ENG"><s0>Video production</s0>
<s5>03</s5>
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<fC03 i1="03" i2="X" l="SPA"><s0>Producción video</s0>
<s5>03</s5>
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<s5>04</s5>
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<fC03 i1="04" i2="3" l="ENG"><s0>Hydrogen production</s0>
<s5>04</s5>
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<fC03 i1="05" i2="X" l="FRE"><s0>Propriété optique</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="X" l="ENG"><s0>Optical properties</s0>
<s5>05</s5>
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<fC03 i1="05" i2="X" l="SPA"><s0>Propiedad óptica</s0>
<s5>05</s5>
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<fC03 i1="06" i2="X" l="FRE"><s0>Effet photoélectrochimique</s0>
<s5>06</s5>
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<fC03 i1="06" i2="X" l="ENG"><s0>Photoelectrochemical effect</s0>
<s5>06</s5>
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<fC03 i1="06" i2="X" l="SPA"><s0>Efecto fotoelectroquímico</s0>
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<s5>08</s5>
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<s5>08</s5>
</fC03>
<fC03 i1="08" i2="X" l="SPA"><s0>Banda prohibida</s0>
<s5>08</s5>
</fC03>
<fC03 i1="09" i2="X" l="FRE"><s0>Densité porteur charge</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="X" l="ENG"><s0>Charge carrier density</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="X" l="SPA"><s0>Concentración portador carga</s0>
<s5>09</s5>
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<s5>10</s5>
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<s5>10</s5>
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<fC03 i1="10" i2="X" l="SPA"><s0>Corriente fotoeléctrica</s0>
<s5>10</s5>
</fC03>
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<s5>11</s5>
</fC03>
<fC03 i1="11" i2="X" l="ENG"><s0>Illumination</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="X" l="SPA"><s0>Alumbrado</s0>
<s5>11</s5>
</fC03>
<fC03 i1="12" i2="X" l="FRE"><s0>Catalyseur</s0>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="X" l="ENG"><s0>Catalyst</s0>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="X" l="SPA"><s0>Catalizador</s0>
<s5>12</s5>
</fC03>
<fC03 i1="13" i2="X" l="FRE"><s0>Caractéristique électrochimique</s0>
<s5>13</s5>
</fC03>
<fC03 i1="13" i2="X" l="ENG"><s0>Electrochemical characteristic</s0>
<s5>13</s5>
</fC03>
<fC03 i1="13" i2="X" l="SPA"><s0>Característica electroquímica</s0>
<s5>13</s5>
</fC03>
<fC03 i1="14" i2="X" l="FRE"><s0>Zinc</s0>
<s2>NC</s2>
<s5>22</s5>
</fC03>
<fC03 i1="14" i2="X" l="ENG"><s0>Zinc</s0>
<s2>NC</s2>
<s5>22</s5>
</fC03>
<fC03 i1="14" i2="X" l="SPA"><s0>Zinc</s0>
<s2>NC</s2>
<s5>22</s5>
</fC03>
<fC03 i1="15" i2="X" l="FRE"><s0>Nickel</s0>
<s2>NC</s2>
<s2>FX</s2>
<s5>23</s5>
</fC03>
<fC03 i1="15" i2="X" l="ENG"><s0>Nickel</s0>
<s2>NC</s2>
<s2>FX</s2>
<s5>23</s5>
</fC03>
<fC03 i1="15" i2="X" l="SPA"><s0>Niquel</s0>
<s2>NC</s2>
<s2>FX</s2>
<s5>23</s5>
</fC03>
<fC03 i1="16" i2="X" l="FRE"><s0>Composé ternaire</s0>
<s5>24</s5>
</fC03>
<fC03 i1="16" i2="X" l="ENG"><s0>Ternary compound</s0>
<s5>24</s5>
</fC03>
<fC03 i1="16" i2="X" l="SPA"><s0>Compuesto ternario</s0>
<s5>24</s5>
</fC03>
<fC03 i1="17" i2="X" l="FRE"><s0>Sulfure de cuivre</s0>
<s5>25</s5>
</fC03>
<fC03 i1="17" i2="X" l="ENG"><s0>Copper sulfide</s0>
<s5>25</s5>
</fC03>
<fC03 i1="17" i2="X" l="SPA"><s0>Cobre sulfuro</s0>
<s5>25</s5>
</fC03>
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<s5>26</s5>
</fC03>
<fC03 i1="18" i2="X" l="ENG"><s0>Indium sulfide</s0>
<s5>26</s5>
</fC03>
<fC03 i1="18" i2="X" l="SPA"><s0>Indio sulfuro</s0>
<s5>26</s5>
</fC03>
<fC03 i1="19" i2="X" l="FRE"><s0>Xénon</s0>
<s2>NC</s2>
<s2>FR</s2>
<s5>27</s5>
</fC03>
<fC03 i1="19" i2="X" l="ENG"><s0>Xenon</s0>
<s2>NC</s2>
<s2>FR</s2>
<s5>27</s5>
</fC03>
<fC03 i1="19" i2="X" l="SPA"><s0>Xenón</s0>
<s2>NC</s2>
<s2>FR</s2>
<s5>27</s5>
</fC03>
<fC03 i1="20" i2="X" l="FRE"><s0>Matériau cristallin</s0>
<s5>28</s5>
</fC03>
<fC03 i1="20" i2="X" l="ENG"><s0>Crystalline material</s0>
<s5>28</s5>
</fC03>
<fC03 i1="20" i2="X" l="SPA"><s0>Material cristalino</s0>
<s5>28</s5>
</fC03>
<fC03 i1="21" i2="X" l="FRE"><s0>CuInS2</s0>
<s4>INC</s4>
<s5>82</s5>
</fC03>
<fN21><s1>268</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
</fN82>
</pA>
</standard>
</inist>
</record>

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The study of preparation and photoelectrical properties of chemical bath deposited Zn, Sb and Ni-doped CuInS2 films for hydrogen production

The study of preparation and photoelectrical properties of chemical bath deposited Zn, Sb and Ni-doped CuInS2 films for hydrogen production

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English descriptors

Abstract

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